The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2024

Filed:

Mar. 31, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventor:

Chih-Yu Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); G06T 1/00 (2006.01); G06T 7/00 (2017.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67253 (2013.01); G06T 1/0014 (2013.01); G06T 7/0004 (2013.01); H01J 37/32944 (2013.01); H01L 21/67017 (2013.01); H01L 21/67288 (2013.01); G06T 2207/10016 (2013.01); G06T 2207/20081 (2013.01); H01J 2237/24507 (2013.01);
Abstract

A plasma discharge detection system detects undesirable plasma discharge events within a semiconductor process chamber. The plasma discharge detection system includes one or more cameras positioned around the semiconductor process chamber. The cameras capture images from within the semiconductor process chamber. The plasma discharge detection system includes a control system that receives the images from the cameras. The control system analyzes the images and detects plasma discharge within the semiconductor process chamber based on the images. The control system can adjust a semiconductor process in real time responsive to detecting the plasma discharge.


Find Patent Forward Citations

Loading…