The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Jan. 27, 2022
Applicant:
Novellus Systems, Inc., Fremont, CA (US);
Inventors:
Assignee:
Novellus Systems, Inc., Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/505 (2006.01); C23C 16/511 (2006.01); C23C 16/32 (2006.01); C23C 16/452 (2006.01); H01L 29/49 (2006.01); H01L 21/768 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02167 (2013.01); C23C 16/045 (2013.01); C23C 16/325 (2013.01); C23C 16/452 (2013.01); C23C 16/505 (2013.01); C23C 16/511 (2013.01); H01L 21/02126 (2013.01); H01L 21/02211 (2013.01); H01L 21/02216 (2013.01); H01L 21/02222 (2013.01); H01L 21/02274 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 29/4983 (2013.01); H01L 29/4991 (2013.01); H01L 21/7682 (2013.01); H01L 2221/1047 (2013.01);
Abstract
Disclosed are methods and systems for providing silicon carbide films. A layer of silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the silicon carbide film. The one or more radical species can be formed in a remote plasma source.