The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Dec. 09, 2020
Applicant:
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Inventor:
Jing Liu, Wuhan, CN;
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/305 (2006.01); G01N 1/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3056 (2013.01); G01N 1/32 (2013.01); H01J 2237/31745 (2013.01);
Abstract
Aspects of the disclosure provide a method of preparing a focused ion beam (FIB) sample and analyzing the sample in an electron microscope system. The method can include forming, over a substrate, a target film having a thickness of less than a threshold corresponding to a limit for FIB requirements, and forming a supporting film over the target film. The method can also include obtaining a FIB sample that includes a portion of the target film and a portion of the supporting film and. The method can further include analyzing the obtained portion of the target film in an electron microscope system.