The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Jun. 14, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
Shuliang Ning, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/12 (2006.01); G11C 29/18 (2006.01); G11C 29/42 (2006.01); G11C 29/44 (2006.01); H03K 19/17728 (2020.01);
U.S. Cl.
CPC ...
G11C 29/42 (2013.01); G11C 29/1201 (2013.01); G11C 29/18 (2013.01); G11C 29/4401 (2013.01); H03K 19/17728 (2013.01); G11C 2029/1802 (2013.01);
Abstract
The embodiments provide a method for reading and writing and a memory device. The method includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; and setting a mark of the address information pointed to by the read command as invalid if an error occurs in the data to be read out, and backing up the address information pointed to by the read command and the mark into a non-volatile memory cell according to a preset rule.