The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Apr. 02, 2022
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
Rumin Ji, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); H01L 23/525 (2006.01); G11C 17/18 (2006.01); H10B 20/20 (2023.01);
U.S. Cl.
CPC ...
G11C 17/165 (2013.01); G11C 17/18 (2013.01); H01L 23/5252 (2013.01); H10B 20/20 (2023.02);
Abstract
Embodiments of the present disclosure relate to the field of semiconductor technology, and provide an anti-fuse memory and a control method thereof. The anti-fuse memory is configured to generate a programming pulse signal based on a row strobe signal, a word line of the anti-fuse memory array is configured to receive the row strobe signal, and the anti-fuse memory array is programmed in response to the programming pulse signal. The embodiments of the present disclosure are at least advantageous to improving accuracy of reading data from the anti-fuse memory array and improving yield of the anti-fuse memory.