The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Nov. 18, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Xifei Bao, Hefei, CN;
Jinguo Fang, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for forming capacitor holes is provided. By forming a first material layer and a second material layer which are thinner and are different in materials on a supporting layer as an over-etching depth adjusting layer, when etching holes are formed in a hard mask layer and the hard mask layer is over-etched, a certain over-etching depth may be formed in the second material layer, and the etching holes terminate in the first material layer, so that the etching depth of the etching holes can be corrected and adjusted. Accordingly, the etching holes formed after the hard mask layer is over-etched can have the same depth or have a small depth difference. Therefore, time points at which the plurality of capacitors holes formed expose the corresponding connecting pads are substantially the same or differ very little, improving the performance of the DRAM.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile