The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Oct. 15, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Antonino Rigano, Cernusco sul Naviglio, IT;

Marcello Mariani, Milan, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); G11C 11/22 (2006.01); G11C 11/408 (2006.01); H01L 21/28 (2006.01); H10B 12/00 (2023.01); H10B 51/30 (2023.01); H10B 51/40 (2023.01); H10B 53/30 (2023.01); H10B 53/40 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78642 (2013.01); G11C 11/2257 (2013.01); G11C 11/4085 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1222 (2013.01); H01L 27/1255 (2013.01); H01L 29/40111 (2019.08); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/66742 (2013.01); H01L 29/78391 (2014.09); H01L 29/78618 (2013.01); H01L 29/78651 (2013.01); H10B 12/0335 (2023.02); H10B 12/315 (2023.02); H10B 12/50 (2023.02); H10B 51/30 (2023.02); H10B 51/40 (2023.02); H10B 53/30 (2023.02); H10B 53/40 (2023.02);
Abstract

Some embodiments include an integrated assembly having a pillar of semiconductor material. The pillar has a base region, and bifurcates into two segments which extend upwardly from the base region. The two segments are horizontally spaced from one another by an intervening region. A conductive gate is within the intervening region. A first source/drain region is within the base region, a second source/drain region is within the segments, and a channel region is within the segments. The channel region is adjacent to the conductive gate and is vertically disposed between the first and second source/drain regions. Some embodiments include methods of forming integrated assemblies.


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