The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Jun. 16, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Injun Hwang, Yongin-si, KR;
Jongseob Kim, Seoul, KR;
Joonyong Kim, Seoul, KR;
Younghwan Park, Suwon-si, KR;
Junhyuk Park, Pohang-si, KR;
Dongchul Shin, Suwon-si, KR;
Jaejoon Oh, Seongnam-si, KR;
Soogine Chong, Seoul, KR;
Sunkyu Hwang, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.