The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Apr. 07, 2021
Applicant:

Sony Group Corporation, Tokyo, JP;

Inventors:

Hidetoshi Oishi, Saga, JP;

Koichi Matsumoto, Kanagawa, JP;

Kazuyuki Tomida, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); H01L 29/16 (2006.01); H01L 21/84 (2006.01); H01L 21/8238 (2006.01); H01L 29/267 (2006.01); H01L 29/24 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H10B 10/00 (2023.01); H01L 21/265 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/26506 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/84 (2013.01); H01L 27/092 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01); H01L 29/1054 (2013.01); H01L 29/16 (2013.01); H01L 29/1606 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/41791 (2013.01); H01L 29/4232 (2013.01); H01L 29/66045 (2013.01); H01L 29/66795 (2013.01); H01L 29/7391 (2013.01); H01L 29/778 (2013.01); H01L 29/7851 (2013.01); H01L 29/78618 (2013.01); H01L 29/78639 (2013.01); H01L 29/78681 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H10B 10/00 (2023.02);
Abstract

A complementary transistor is constituted of a first transistor TRand a second transistor TR, active regionsof the respective transistors are formed by layering first A layersand the first B layersrespectively, surface regionsprovided in a base correspond to first A layersrespectively, first B layerseach have a conductivity type different from that of the first A layers, and extension layersof the first B layer are provided on insulation regionsrespectively.


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