The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Sep. 30, 2020
Applicant:
Wolfspeed, Inc., Durham, NC (US);
Inventors:
Lei Zhao, Chandler, AZ (US);
Fabian Radulescu, Chapel Hill, NC (US);
Assignee:
WOLFSPEED, INC., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 23/528 (2006.01); H01L 23/552 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H03F 3/21 (2006.01); H03F 1/02 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 23/481 (2013.01); H01L 23/5286 (2013.01); H01L 23/552 (2013.01); H01L 27/0605 (2013.01); H01L 29/0642 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01); H01L 29/7816 (2013.01); H03F 1/0288 (2013.01); H03F 3/211 (2013.01); H01L 2223/6611 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6655 (2013.01); H01L 2223/6683 (2013.01);
Abstract
The present disclosure relates to a semiconductor device with isolation and/or protection structures. A semiconductor device can include a substrate, a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, and an isolation structure formed on the substrate. The isolation structure can be formed on the substrate between the first transistor and the second transistor. The isolation structure can be configured to isolate the first transistor and the second transistor.