The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Apr. 21, 2021
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Dieter Pierreux, Dilbeek, BE;
Bert Jongbloed, Oud-Heverlee, BE;
Qi Xie, Wilsele, BE;
Giuseppe Alessio Verni, Ottignies, BE;
Assignee:
ASM IP Holding B.V., Versterkerstraat, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01); C23C 16/34 (2006.01); H01L 21/3205 (2006.01); H10B 43/35 (2023.01); H01L 23/535 (2006.01); H01L 29/786 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/775 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); C23C 16/34 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01L 21/02697 (2013.01); H01L 21/28556 (2013.01); H01L 21/32051 (2013.01); H10B 43/35 (2023.02); H01L 23/535 (2013.01); H01L 28/60 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract
Disclosed are methods and systems for depositing layers comprising vanadium, nitrogen, and element selected from the list consisting of molybdenum, tantalum, niobium, aluminum, and silicon. The layers are deposited onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.