The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Oct. 08, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Yuan Li, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
The present application provides a semiconductor structure manufacturing method and two semiconductor structures. The manufacturing method includes: providing a substrate and a silicon layer, the substrate exposing a top surface of the silicon layer; performing deposition to form an alloy layer on the silicon layer, the deposition being performed in a nitrogen-containing atmosphere, and a concentration of nitrogen atoms in the nitrogen-containing atmosphere increasing with an increase in deposition time; and annealing the alloy layer and the silicon layer. In embodiments of the present application, an increase in the concentration of nitrogen atoms can control a silicification reaction of the alloy layer, thereby preventing a line width effect and reducing the resistance of the semiconductor structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile