The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Sep. 04, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Research & Business Foundation Sungkyunkwan University, Gyeonggi-do, KR;
Changhyun Kim, Seoul, KR;
Sangwoo Kim, Yongin-si, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Ahrum Sohn, Pyeongtaek-si, KR;
Jaehwan Jung, Daejeon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Research & Business Foundation, Sungkyunkwan University, Gyeonggi-do, KR;
Abstract
Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: depositing a transition metal dichalcogenide thin film on a substrate; and heat-treating the deposited transition metal dichalcogenide thin film.