The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Feb. 10, 2020
Applicant:
Hitachi High-tech Corporation, Tokyo, JP;
Inventors:
Assignee:
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32146 (2013.01); H01L 21/0276 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01);
Abstract
Provided is a plasma processing method capable of improving an etching selectivity of a material to be etched with respect to a mask material and reducing a roughness of a side wall of a mask pattern. The plasma processing method of selectively depositing a deposition film on the mask material with respect to the material to be etched includes controlling an etching parameter so that an incubation time of the mask material is shorter than an incubation time of the material to be etched.