The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Oct. 26, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Shu-Liang Ning, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/00 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0629 (2013.01); G06F 3/0614 (2013.01); G06F 3/0653 (2013.01); G06F 3/0673 (2013.01);
Abstract

A method for adjusting the memory includes: acquiring a mapping relationship between a temperature of a transistor, a gate voltage of the transistor, and an actual time at which data is written into the memory; acquiring a current temperature of the transistor; and adjusting the gate voltage, based on the current temperature and the mapping relationship, so that the actual time at which the data is written into the memory corresponding to the adjusted gate voltage is within a preset writing time.


Find Patent Forward Citations

Ning, Shu-Liang. (2024). Method and system for adjusting memory, and semiconductor device (U.S. Patent No. 11886721). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11886721

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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