The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Nov. 27, 2018
Applicant:

Ebara Corporation, Tokyo, JP;

Inventors:

Yuki Watanabe, Tokyo, JP;

Keita Yagi, Tokyo, JP;

Assignee:

EBARA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 37/005 (2012.01); B24B 37/32 (2012.01); B24B 37/013 (2012.01); B24B 37/20 (2012.01);
U.S. Cl.
CPC ...
B24B 37/005 (2013.01); B24B 37/013 (2013.01); B24B 37/205 (2013.01); B24B 37/32 (2013.01);
Abstract

A substrate processing apparatus includes a polishing head defining plural pressure chambers Dto Dfor pressing a wafer W on a polishing pad, a pressure control unit performing pressure feedback control by individually controlling pressures in the pressure chambers Dto D, a film thickness measurement unit measuring a film thickness distribution of the wafer W being polished, a storage unit storing multiple pieces of information on a preset pressure of the pressure chambers Dto D, and a response characteristic acquisition unit changing the preset pressure every time a predetermined condition is satisfied during polishing of the wafer W, measuring a polishing rate applied to the wafer W, and acquiring a response characteristic of the polishing of the wafer W. The response characteristic indicates responsiveness of the polishing of the wafer W to the pressure feedback. The response characteristic is acquired based on the obtained polishing rates.


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