The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Jul. 13, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Wenfeng Wang, Hefei, CN;
Shuangshuang Wu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for forming a capacitor includes: providing a substrate with an electric contact portion; forming a supporting layer and a sacrificial layer which are alternately laminated on a surface of the substrate, wherein the topmost layer is a supporting layer; forming a capacitor hole penetrating through the supporting layer and the sacrificial layer and exposing the electric contact portion; forming a bottom electrode layer covering an inner surface of the capacitor hole; forming a protective layer covering a surface of the bottom electrode layer; removing the sacrificial layer, during which the bottom electrode layer being protected by the protective layer; removing the protective layer; and sequentially forming a capacitor dielectric layer and a top electrode layer.