The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2024

Filed:

Nov. 21, 2022
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventor:

Ming-Shing Chen, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/532 (2006.01); H01L 29/49 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 23/53295 (2013.01); H01L 27/14614 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H01L 29/4933 (2013.01); H01L 21/76889 (2013.01); H01L 21/76897 (2013.01); H01L 23/53209 (2013.01); H01L 27/14632 (2013.01); H01L 27/14687 (2013.01); H01L 29/41725 (2013.01); H01L 29/665 (2013.01);
Abstract

An image sensor device includes a transistor disposed in a pixel region; a salicide block layer covering the pixel region; a first ILD layer covering the salicide block layer; a second ILD layer on the first ILD layer; a source contacts extending through the second and first ILD layers and the salicide block layer, and including first polysilicon plug in the first ILD layer and first conductive metal layer on the first polysilicon plug; and a drain contact extending through the second and first ILD layers and the salicide block, and including second polysilicon plug in the first ILD layer and second conductive metal layer on the second polysilicon plug.


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