The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2024

Filed:

May. 04, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Kaushal K. Singh, Santa Clara, CA (US);

Mei-Yee Shek, Santa Clara, CA (US);

Srinivas D. Nemani, Sunnyvale, CA (US);

Ellie Y. Yieh, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/383 (2006.01); C23C 14/58 (2006.01); C23C 14/48 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
H01L 21/383 (2013.01); C23C 14/48 (2013.01); C23C 14/5806 (2013.01); H01L 21/44 (2013.01);
Abstract

The present disclosure provides methods for performing an annealing process on a metal containing layer in TFT display applications, semiconductor or memory applications. In one example, a method of forming a metal containing layer on a substrate includes supplying an oxygen containing gas mixture on a substrate in a processing chamber, the substrate comprising a metal containing layer disposed on an optically transparent substrate, maintaining the oxygen containing gas mixture in the processing chamber at a process pressure between about 2 bar and about 50 bar, and thermally annealing the metal containing layer in the presence of the oxygen containing gas mixture.


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