The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Jul. 20, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Lili Feng, San Jose, CA (US);
Madhur Singh Sachan, Belmont, CA (US);
Regina Germanie Freed, Los Altos, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
A method for forming a nanostructure on a substrate includes performing a first lithography-and-etch process, including patterning a mandrel layer disposed on a first dielectric layer, performing a spacer patterning process, including forming a spacer layer on sidewalls of the patterned mandrel layer, performing a first gap-filling process, including forming a gap-filling layer in openings of the spacer layer on the first dielectric layer and over the patterned mandrel layer, performing a second lithography-and-etch process, including patterning the gap-filling layer and further patterning the patterned mandrel layer, performing a second gap-filling process, including further forming the gap-filling layer in openings of the twice patterned mandrel layer, and performing a spacer removing process, including removing the patterned spacer layer and the twice patterned mandrel layer.