The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2024

Filed:

Aug. 07, 2021
Applicant:

Changxin Memory Technologies, Inc., Anhui, CN;

Inventor:

Shuliang Ning, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/42 (2006.01); G11C 11/4096 (2006.01); G11C 29/18 (2006.01); H03K 19/17728 (2020.01);
U.S. Cl.
CPC ...
G11C 29/42 (2013.01); G11C 11/4096 (2013.01); G11C 29/18 (2013.01); H03K 19/17728 (2013.01); G11C 2029/1802 (2013.01);
Abstract

A read/write method and a memory are provided. The read/write method includes: issuing a read command to a memory, wherein the read command points to an address; reading to-be-read data from a storage unit corresponding to the address to which the read command points; and in response to an error occurring in the to-be-read data, marking the address to which the read command points as disabled. When executing a read/write operation on the memory, the address of the storage unit is marked to distinguish an enabled storage unit from a failed storage unit in real time. A data error or a data loss can be avoided, thereby greatly improving the reliability and the service life of the memory.


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