The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Jul. 21, 2021
Ememory Technology Inc., Hsin-Chu, TW;
Ying-Je Chen, Hsinchu County, TW;
Wein-Town Sun, Hsinchu County, TW;
Chun-Hsiao Li, Hsinchu County, TW;
Hsueh-Wei Chen, Hsinchu County, TW;
EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;
Abstract
A memory cell of a non-volatile memory includes a memory element. The memory element is a transistor. The memory element includes an asymmetric spacer. In the memory element, a channel under the wider part of the spacer is longer. When the program operation of the memory element is performed, more carriers are injected into a charge-trapping layer of the spacer through the longer channel. Consequently, the program operation of the memory element is performed more efficiently, and the time period of performing the program operation is reduced.