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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11877434 B1

PDFFull Text
Date of Patent:
Jan. 16, 2024

Filed:

Jul. 09, 2020

Microelectronic devices having features with a fin portion of different sidewall slope than a lower portion, and related methods and electronic systems

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yan Li, Boise, ID (US);

Song Guo, Boise, ID (US);

Mohd Kamran Akhtar, Boise, ID (US);

Alex J. Schrinsky, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

TraskBritt

Primary Examiner:

Kretelia Graham

Assistant Examiner:

Tenley H Schofield

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H01L 25/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/498 (2006.01); H10B 12/00 (2023.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H10B 12/053 (2023.02); H01L 21/3065 (2013.01); H10B 12/34 (2023.02);
Abstract

A method of forming a microelectronic device structure comprises exposing a silicon structure to an etching chemistry at a first bias voltage of greater than about 500 V to form at least one initial trench between sidewalls of features formed in the silicon structure. The method also comprises exposing at least the sidewalls of the features to the etching chemistry at a second bias voltage of less than about 100 V to remove material from the sidewalls to expand the at least one initial trench and form at least one broader trench without substantially reducing a height of the features. Related apparatuses and electronic systems are also disclosed.

Find Patent Forward Citations

Li, Yan. (2024). Microelectronic devices having features with a fin portion of different sidewall slope than a lower portion, and related methods and electronic systems (U.S. Patent No. 11877434). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11877434

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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