The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Nov. 13, 2019
Ricoh Company, Ltd., Tokyo, JP;
Yuji Sone, Kanagawa, JP;
Naoyuki Ueda, Kanagawa, JP;
Yuki Nakamura, Tokyo, JP;
Mikiko Takada, Kanagawa, JP;
Shinji Matsumoto, Kanagawa, JP;
Ryoichi Saotome, Kanagawa, JP;
Sadanori Arae, Kanagawa, JP;
Yukiko Abe, Kanagawa, JP;
RICOH COMPANY, LTD., Tokyo, JP;
Abstract
To provide a field-effect transistor, containing: a substrate; a protective layer; a gate insulating layer formed between the substrate and the protective layer; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed at least between the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is formed at an opposite side to the side where the semiconductor layer is provided, with the gate insulating layer being between the gate electrode and the semiconductor layer, and is in contact with the gate insulating layer, wherein the protective layer contains a metal oxide composite, which contains at least Si and alkaline earth metal.