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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11876136 B1

PDFFull Text
Date of Patent:
Jan. 16, 2024

Filed:

Feb. 01, 2022

Transistor having wrap-around source/drain contacts and under-contact spacers

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Yi Song, Milpitas, CA (US);

Praveen Joseph, White Plains, NY (US);

Andrew Greene, Slingerlands, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Assignee:

International Business Machine Corporation, Armonk, NY (US);

Attorneys:

CANTOR COLBURN LLP

Jeffrey L. Kelly

Primary Examiner:

Nilufa Rahim

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/66795 (2013.01); H01L 2029/7858 (2013.01);
Abstract

Embodiments of the invention are directed to a semiconductor device structure that includes a first channel region over a substrate, a second channel region over the first channel region, and a merged source or drain (S/D) region over the substrate and adjacent to the first channel region and the second channel region. The merged S/D region is communicatively coupled to the first channel region and the second channel region. A wrap-around S/D contact is configured such that it is on a top surface, sidewalls, and a bottom surface of the merged S/D region.

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