The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2024

Filed:

Nov. 09, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Scott Falk, Essex, MA (US);

Jun-Feng Lu, Shanghai, CN;

Qintao Zhang, Mt. Kisco, NY (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/302 (2006.01); H01J 37/317 (2006.01); H01L 21/322 (2006.01); H01L 21/3115 (2006.01); H01L 23/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); H01L 21/0217 (2013.01); H01L 21/02351 (2013.01); H01L 21/302 (2013.01); H01L 21/31155 (2013.01); H01L 21/322 (2013.01); H01L 23/562 (2013.01); H01J 37/3171 (2013.01);
Abstract

A method may include providing a substrate, where the substrate includes a first main surface and a second main surface, opposite the first main surface. The second main surface may include a stress compensation layer. The method may include directing ions to the stress compensation layer in an ion implant procedure. The ion implant procedure may include exposing a first region of the stress compensation layer to a first implant process, wherein a second region of the stress compensation layer is not exposed to the first implant process.


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