The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Feb. 22, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Tai-Cheng Hou, Tainan, TW;
Fu-Yu Tsai, Tainan, TW;
Bin-Siang Tsai, Changhua County, TW;
Da-Jun Lin, Kaohsiung, TW;
Chau-Chung Hou, Tainan, TW;
Wei-Xin Gao, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/01 (2023.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); H10B 61/00 (2023.02); H10N 50/80 (2023.02);
Abstract
A method for fabricating a semiconductor device includes the steps of: providing a substrate, wherein the substrate comprises a MRAM region and a logic region; forming a magnetic tunneling junction (MTJ) on the MRAM region; forming a top electrode on the MTJ; and then performing a flowable chemical vapor deposition (FCVD) process to form a first inter-metal dielectric (IMD) layer around the top electrode and the MTJ.