The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Dec. 06, 2021
Taiyuan University of Technology, Taiyuan, CN;
Linlin Shi, Taiyuan, CN;
Yanxia Cui, Taiyuan, CN;
Guohui Li, Taiyuan, CN;
Ye Zhang, Taiyuan, CN;
Wenyan Wang, Taiyuan, CN;
Ting Ji, Taiyuan, CN;
Taiyuan University of Technology, Taiyuan, CN;
Abstract
This application relates to preparation of organic photomultiplication photodetectors, and more particularly to an organic photomultiplication photodetector with bi-directional bias response and a method for producing the same. The photodetector includes an anode layer, an anode modification layer, an interfacial modification layer, an active layer and a cathode layer arranged in sequence. The interfacial modification layer is made of AlO. The anode layer is made of indium tin oxide (ITO). The anode modification layer is made of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS). The active layer is made of poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C-butyric acid methyl ester (P3HT:PCBM). The cathode layer is made of aluminum, silver or gold.