The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Apr. 19, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Georgios Vellianitis, Hsinchu, TW;
Marcus Johannes Henricus Van Dal, Hsinchu, TW;
Gerben Doornbos, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A transistor includes a gate electrode, a gate dielectric located over the gate electrode, a channel layer that includes an oxide semiconductor material and that is located over the gate dielectric, a buffer located to cover at least a portion of the channel layer, and source/drain contacts disposed on the buffer. The buffer includes a material that receives hydrogen. A method for manufacturing the transistor is also provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile