The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

May. 07, 2021
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Takashi Daitoku, Tokyo, JP;

Susumu Taniguchi, Tokyo, JP;

Akiko Seki, Tokyo, JP;

Atsushi Sato, Tokyo, JP;

Yuhei Horikawa, Tokyo, JP;

Makoto Orikasa, Tokyo, JP;

Hisayuki Abe, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 33/62 (2010.01); H05K 1/09 (2006.01); H01L 21/48 (2006.01); H05K 3/40 (2006.01); G06F 3/044 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); G06F 3/044 (2013.01); H01L 21/4857 (2013.01); H01L 23/49866 (2013.01); H01L 33/62 (2013.01); H05K 1/09 (2013.01); H05K 3/4007 (2013.01); H01L 2933/0066 (2013.01); H05K 2201/0338 (2013.01); H05K 2201/0341 (2013.01); H05K 2203/04 (2013.01);
Abstract

An electroconductive substrate, including: a base material; a foundation layer disposed on the base material; a trench formation layer disposed on the foundation layer, and an electroconductive pattern layer including metal plating. A trench including a bottom surface to which the foundation layer is exposed, is formed. The trench is filled with the electroconductive pattern layer. The foundation layer includes a mixed region which is formed from a surface of the foundation layer on the electroconductive pattern layer side towards the inside thereof, and contains metal particles which contain a metal configuring the electroconductive pattern layer, and enter the foundation layer.


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