The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Dec. 09, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Research & Business Foundation Sungkyunkwan University, Gyeonggi-do, KR;
Changhyun Kim, Seoul, KR;
Sang-Woo Kim, Yongin-si, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Ahrum Sohn, Pyeongtaek-si, KR;
Jaehwan Jung, Daejeon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS) substrate.