The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

Sep. 13, 2022
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Akinori Tanaka, Toyama, JP;

Hideto Tateno, Toyama, JP;

Sadayoshi Horii, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); H01L 21/67 (2006.01); C23C 16/56 (2006.01); C23C 16/455 (2006.01); C23C 16/448 (2006.01); H01L 21/31 (2006.01); C23C 16/44 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); C23C 16/401 (2013.01); C23C 16/4412 (2013.01); C23C 16/4485 (2013.01); C23C 16/45561 (2013.01); C23C 16/56 (2013.01); H01J 37/32449 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02222 (2013.01); H01L 21/02282 (2013.01); H01L 21/02326 (2013.01); H01L 21/02337 (2013.01); H01L 21/31 (2013.01); H01L 21/67017 (2013.01); H01L 21/67109 (2013.01); H01L 21/67253 (2013.01);
Abstract

Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.


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