The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

Jun. 30, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Shuliang Ning, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/12 (2006.01); G11C 29/18 (2006.01); G11C 29/42 (2006.01); G11C 29/44 (2006.01); G11C 29/00 (2006.01);
U.S. Cl.
CPC ...
G11C 29/42 (2013.01); G11C 29/18 (2013.01); G11C 29/4401 (2013.01); G11C 29/702 (2013.01);
Abstract

The embodiments provide a method for reading and writing and a memory device. The method for reading and writing includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; and associating the address information pointed to by the read command with a spare memory cell if an error occurs in the data to be read out. The method for reading and writing provided by the present disclosure greatly improves reliability of the memory device and prolongs lifespan of the memory device.


Find Patent Forward Citations

Ning, Shuliang. (2024). Method for reading and writing and memory device (U.S. Patent No. 11869615). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11869615

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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