The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

Aug. 07, 2021
Applicant:

Changxin Memory Technologies, Inc., Anhui, CN;

Inventor:

Shuliang Ning, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 11/4074 (2006.01); G11C 11/408 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G11C 11/4085 (2013.01); H01L 24/08 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 2224/08146 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/1427 (2013.01); H01L 2924/1436 (2013.01);
Abstract

A semiconductor memory is provided. The semiconductor memory comprises a memory chip and a voltage regulation unit. The memory chip includes at least a storage array and the voltage regulation unit includes at least an operational amplifier. The voltage regulation unit is configured to convert an external input first voltage into a second voltage to be provided to a word line driver circuit associated with the memory chip. The first voltage is greater than the second voltage. According to the semiconductor memory provided, power consumption of the memory chip (or the semiconductor memory) is reduced and the second voltage provided to the word line driver circuit reaches a threshold voltage.


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