The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Dec. 30, 2019
Shanghai Ic R & D Center Co., Ltd., Shanghai, CN;
Yuhang Zhao, Shanghai, CN;
Jianxin Wen, Shanghai, CN;
Changming Pi, Shanghai, CN;
Xi Zeng, Shanghai, CN;
Ling Shen, Shanghai, CN;
Shanghai IC R&D Center Co., Ltd., Shanghai, CN;
Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd, Shanghai, CN;
Abstract
The disclosure discloses a CMOS image sensor, which includes a plurality of image sensor units and a resistance-to-digital converting unit. Each image sensor unit includes a pixel unit and a resistive random access memory unit connected to the pixel unit, the pixel unit is configured to convert a received optical signal into an analog signal and the resistive random access memory unit is configured to convert the analog electrical signal into a resistance value. The resistance-to-digital converting unit is connected to the plurality of the image sensor units, and is configured to convert the resistance value into a digital signal. The resistive random access memory unit is adopted in the present disclosure to replace a transistor device and is configured to convert resistance information of the resistive random access memory unit into a digital signal and output. Thus, digital quantization of image information is completed.