The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Jul. 23, 2021
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Jie Zeng, Singapore, SG;

Raunak Kumar, Singapore, SG;

Souvick Mitra, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
H01L 29/861 (2013.01); H01L 27/0255 (2013.01); H01L 27/0259 (2013.01); H01L 29/66121 (2013.01); H01L 29/735 (2013.01);
Abstract

An electrostatic discharge (ESD) protection device including: a substrate including: a first, second and third doped regions, the second doped region disposed between the first and third doped regions, the second doped region has a first conductivity type and a first doping concentration and the first and third doped regions have a second conductivity type and a second doping concentration; first and second doped terminal regions disposed within the first and second doped regions, respectively; and a doped island region disposed within the second doped region, the first and second doped terminal regions and doped island region have the second conductivity type and a third doping concentration, the third doping concentration higher than the first and second doping concentrations; and conductive terminals respectively coupled to the doped terminal regions; and an insulation layer arranged on the substrate between the conductive terminals and covering at least the second doped region.


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