The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Dec. 15, 2021
Applicants:
Denso Corporation, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Mirise Technologies Corporation, Nisshin, JP;
Inventors:
Shuhei Ichikawa, Nisshin, JP;
Hiroki Miyake, Nisshin, JP;
Assignees:
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
MIRISE Technologies Corporation, Nisshin, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/425 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/425 (2013.01); H01L 29/24 (2013.01);
Abstract
A method for manufacturing a semiconductor device having a gallium oxide-based semiconductor layer includes: ion-implanting dopant into a gallium oxide-based semiconductor layer while heating the gallium oxide-based semiconductor layer; and annealing the gallium oxide-based semiconductor layer under an oxygen atmosphere, after the ion-implanting.