The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Oct. 15, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Fang Ruan, Milpitas, CA (US);
Diwakar Kedlaya, San Jose, CA (US);
Amit Bansal, Milpitas, CA (US);
Venkata Sharat Chandra Parimi, Sunnyvale, CA (US);
Rajaram Narayanan, Santa Clara, CA (US);
Badri N. Ramamurthi, Los Gatos, CA (US);
Sherry L. Mings, Sachse, TX (US);
Job George Konnoth Joseph, Kerala, IN;
Rupankar Choudhury, Agartala, IN;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A semiconductor processing system includes a remote plasma source (RPS), a faceplate, and an output manifold positioned between the RPS and the faceplate. The output manifold is characterized by a plurality of purge outlets that are fluidly coupled with a purge gas source and a plurality of deposition outlets that are fluidly coupled with a deposition gas source. A delivery tube extends between and fluidly couples the RPS and the faceplate. The delivery tube is characterized by a generally cylindrical sidewall that defines an upper plurality of apertures that are arranged in a radial pattern. Each of the upper apertures is fluidly coupled with one of the purge outlets. The generally cylindrical sidewall defines a lower plurality of apertures that are arranged in a radial pattern and below the upper plurality of apertures. Each of the lower apertures is fluidly coupled with one of the deposition outlets.