The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Jun. 14, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Chia-Chung Chen, Keelung, TW;
Chung-Hao Chu, Hsinchu, TW;
Chi-Feng Huang, Hsinchu County, TW;
Victor Chiang Liang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/265 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); H01L 21/823431 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A method of manufacturing a semiconductor structure, comprising providing a substrate; forming a fin structure over the substrate; depositing an insulation material over the fin structure; performing a plurality of ion implantation cycles in-situ with implantation energy increased or decreased stepwise; and removing at least a portion of the insulation material to expose a portion of the fin structure.