The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Jun. 28, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Tzung-Han Lee, Hefei, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02614 (2013.01); H01L 21/02236 (2013.01); H01L 21/02247 (2013.01); H01L 21/02252 (2013.01); H01L 21/02532 (2013.01); H01L 21/3083 (2013.01);
Abstract

A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes: a base is provided, in which the base includes a first doped area and a second doped area, and an isolation structure is provided between the first doped area and the second doped area; nitridation treatment is performed on the first doped area and the second doped area; and oxidation treatment is performed on the first doped area and the second doped area subjected to the nitridation treatment, to form a first gate oxide layer and a second gate oxide layer respectively.


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Lee, Tzung-Han. (2024). Method of forming oxide layer on a doped substrate using nitridation and oxidation process (U.S. Patent No. 11862461). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11862461

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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