The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Jul. 12, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jeongil Mun, Hwaseong-si, KR;

Jinyoung Park, Anyang-si, KR;

Jongwoo Sun, Hwaseong-si, KR;

Hyungjoo Lee, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32715 (2013.01); H01J 37/32541 (2013.01); H01J 37/32568 (2013.01); H01L 21/6833 (2013.01); H01J 37/32697 (2013.01);
Abstract

Semiconductor processing equipment and an electrostatic chuck include a semiconductor having: an upper electrode; a gas supplier connected to the upper electrode; and a substrate supporting structure spaced apart from the upper electrode to define a processing volume. The substrate supporting structure supports a substrate and includes: a lower electrode having a side area disposed outside a step formed at an outer perimeter portion of the lower electrode and a processing area disposed inside the step; a first plate disposed on the lower electrode; an attraction electrode disposed on the first plate; and a second plate disposed on the attraction plate. The second plate supports the substrate in a state in which the substrate is laid on an upper surface of the second plate. Each of the first plate and the second plate includes ceramic. The lower electrode has a maximum height at a central portion of the processing area.


Find Patent Forward Citations

Loading…