The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Apr. 30, 2022
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
Shu-Liang Ning, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/14 (2006.01); G11C 7/10 (2006.01); G01R 31/3185 (2006.01); G11C 17/12 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 7/14 (2013.01); G01R 31/318536 (2013.01); G11C 7/1051 (2013.01); G11C 7/1066 (2013.01); G11C 7/1096 (2013.01); G11C 7/22 (2013.01); G11C 17/12 (2013.01);
Abstract
A memory chip stores a characterization parameter for characterizing a process corner of the memory chip, the memory chip further has a reference voltage with an adjustable value, the value of the reference voltage is adjustable based on the characterization parameter, and the memory chip adjusts, based on the reference voltage, a delay from reading out data from a memory cell to outputting the data through a data port.
Ning, Shu-Liang. (2024). Memory chip and memory system (U.S. Patent No. 11862290). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11862290
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile