The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Jan. 11, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Minjian Wu, Shanghai, CN;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 11/56 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0483 (2013.01); G11C 11/5628 (2013.01); G11C 11/5671 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01);
Abstract

A memory device and method of operation are described. The memory device may include memory cells of a first type that each store a single bit of information and memory cells of a second type that each store multiple bits of information. The memory cells of the first type may be more robust to extreme operating conditions than the second type but may have one or more drawbacks (e.g., lower density). The memory device may identify data to be written, and in response, may identify a temperature of the memory device. If the temperature is within a nominal operating range associated with a low risk of memory errors, the memory device may write the data to the memory cells of the second type. If the temperature is outside the nominal operating range, the memory device may write the data to the memory cells of the first type.


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