The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Sep. 16, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Sungsoo Chi, Hefei, CN;

Jia Wang, Hefei, CN;

Ying Wang, Hefei, CN;

Shuyan Jin, Hefei, CN;

Fengqin Zhang, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 11/4097 (2006.01); G06F 11/10 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4097 (2013.01); G06F 11/1068 (2013.01); G11C 11/4091 (2013.01);
Abstract

A bit line sense circuit and a memory are disclosed in the present application. The bit line sense circuit includes: L storage unit groups, each storage unit group including H bit lines, both L and H being positive integers greater than or equal to 2; and M sense amplifier groups, configured to write or read storage data to or from the bit lines in the storage unit groups and electrically connected to the L storage unit groups, M being an integer multiple of L or L being an integer multiple of M. Two adjacent bit lines of the H bit lines are connected to the different sense amplifier groups.


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