The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Sep. 09, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
Shu-Liang Ning, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4076 (2006.01); G11C 11/409 (2006.01); G01K 13/00 (2021.01); H01L 25/18 (2023.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
G11C 11/4076 (2013.01); G01K 13/00 (2013.01); G11C 11/409 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01);
Abstract
A reading and writing method for a memory device and a memory device are provided. The memory device includes a memory chip. The reading and writing method of the memory device includes that: during operation of the memory chip, the temperature of the memory chip is measured, and a writing recovery time of the memory chip is adjusted according to the temperature.
Ning, Shu-Liang. (2024). Reading and writing method of memory device and memory device (U.S. Patent No. 11862229). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11862229
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile