The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Aug. 07, 2021
Applicant:

Changxin Memory Technologies, Inc., Anhui, CN;

Inventor:

Shuliang Ning, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 11/4072 (2006.01); H01L 25/065 (2023.01); H01L 25/16 (2023.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
G11C 11/4072 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 25/16 (2013.01); H01L 25/18 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06589 (2013.01); H01L 2225/06596 (2013.01);
Abstract

A semiconductor structure and a preheating method thereof are provided. The semiconductor structure includes: a storage chip; a temperature detection unit configured to detect a temperature of the storage chip before the storage chip initiates; and a control chip configured to: before the storage chip initiates, heat the storage chip and determine whether the temperature detected by the temperature detection unit reaches a specified threshold; and if the temperature reaches the specified threshold, control the storage chip to initiate. When the semiconductor structure provided in the present invention works at a low temperature, the storage chip may be heated to the specified threshold, thereby preventing an increase of the resistances on the bit line, the word line, and the metal connection line in the storage chip, and improving the performance of read/write operations of the memory.


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