The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Jul. 08, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Kun-Lung Chen, Hsinchu, TW;

Tung-Tsun Chen, Hsinchu, TW;

Cheng-Hsiang Hsieh, Taipei, TW;

Yu-Jie Huang, Kaohsiung, TW;

Jui-Cheng Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 33/487 (2006.01); C12Q 1/6874 (2018.01); G01N 27/414 (2006.01); C12Q 1/6869 (2018.01);
U.S. Cl.
CPC ...
G01N 33/48721 (2013.01); C12Q 1/6874 (2013.01); G01N 27/4145 (2013.01); G01N 27/4146 (2013.01); G01N 27/4148 (2013.01); C12Q 1/6869 (2013.01);
Abstract

A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.


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