The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Aug. 09, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tung-Tsun Chen, Hsinchu, TW;

Yi-Hsing Hsiao, Hsinchu, TW;

Jui-Cheng Huang, Hsinchu, TW;

Yu-Jie Huang, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); G01N 33/569 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4148 (2013.01); G01N 27/4145 (2013.01); G01N 33/56966 (2013.01); H01L 21/76251 (2013.01);
Abstract

An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.


Find Patent Forward Citations

Loading…