The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
May. 31, 2023
Applicant:
Resonac Corporation, Tokyo, JP;
Inventor:
Tomohiro Shonai, Tokyo, JP;
Assignee:
Resonac Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); C30B 33/08 (2006.01); C30B 23/02 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 33/08 (2013.01); C30B 23/02 (2013.01); C30B 29/36 (2013.01); H01L 29/1608 (2013.01);
Abstract
An 8-inch SiC single crystal substrate of an embodiment has a diameter in a range of 195 mm to 205 mm, a thickness in a range of 300 μm to 650 μm, a SORI of 50 μm or less, and an in-plane variation of the thickness of the substrate, which is the difference between the maximum and minimum substrate thickness at the center of the substrate and four points on the circumference of a circle having a radius half the radius of the substrate, is 1.5 μm or less.