The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Sep. 08, 2020
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Yuya Matsubara, Yokkaichi, JP;
Hiroshi Kubota, Yokkaichi, JP;
Assignee:
Kioxia Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/52 (2006.01); H01J 37/32 (2006.01); C23C 16/44 (2006.01); C23C 16/46 (2006.01); C23C 16/40 (2006.01); C23C 16/26 (2006.01); C23C 16/505 (2006.01);
U.S. Cl.
CPC ...
C23C 16/52 (2013.01); C23C 16/26 (2013.01); C23C 16/402 (2013.01); C23C 16/4405 (2013.01); C23C 16/46 (2013.01); C23C 16/505 (2013.01); H01J 37/32192 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01J 37/32724 (2013.01); H01J 2237/335 (2013.01); H01J 2237/3321 (2013.01);
Abstract
A semiconductor manufacturing apparatus according to the present embodiment includes a first gas feeder, a first gas processor and a second gas feeder. The first gas feeder is provided above a stage on which a substrate is to be placed and feeds a first gas to the substrate. The first gas processor supplies high frequency power to the stage and renders the first gas fed from the first gas feeder into plasma. The second gas feeder is provided above the stage and feeds a second gas more difficult to render into plasma than the first gas to an outer periphery of the first gas having been rendered into plasma.